- Master or above degree in RF, millimeter wave Engineering or relevant disciplines.

- Good knowledge on RF wave power transistors. Experience in GaN product development is preferred.

- Good knowledge on Agilent's Advanced Design System (ADS) and HFSS.

- Strong communication skills and ability to work with global teams. Good language skill in English.

- Develop discrete and integrated power transistors in package up to 6GHz for cellular, emerging, and RF power markets based on GaN, LDMOS and SiGe technology.

- Involves electromagnetic simulation, modeling and low impedance transistor internal and external matching networks, passive components and substrate simulation and layout.

- Design integrated passives, wire bonds, packaging interfaces and PCB board level matching.

- The design process uses a combination of measurement based techniques (e.g. loadpull and S parameter data, etc) and CAD software with the use of linear or non-linear models and design kits.

- Make use of Agilent’s ADS, Momentum, FEM, 3D and planar electromagnetic simulation tools.

- Work closely with global device&package engineers, product engineers, project managers, modeling engineers, thermal, application engineers and manufacturing personnel for successful and timely product introduction, and report to local management team.